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Half-bridge series for data center cooling and industrial drivers includes 1, 1.4 and 2 mΩ RDSon SiC MOSFETs and parallel SiC diodes for best-in-class high power conversion efficiency.
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has launched the QSiC™ Dual3, a family of 1200 V half-bridge MOSFET modules for motor drives in data center cooling systems and grid converters in energy storage systems.
The family enables the creation of power converters with both industry-leading conversion efficiency and power density. Additionally, the series includes an optional parallel Schottky barrier diode to further reduce switching losses in high-temperature environments.
Two of the family’s six devices have an RDSon of just 1 mΩ and a power density of 240 W/in3 from its 62 x 152 mm package.
The QSiC Dual3 has been developed to enable the replacement of IGBT modules with minimal redesign, with all MOSFET die having been screened using wafer-level gate-oxide burn-in tests exceeding 1,450 V. The modules additionally feature a low junction-to-case thermal resistance and enable a simplified system design with smaller, lighter heatsinks.
“Rising AI-driven power and thermal demands in data centers are pushing the limits of traditional cooling and power systems,” said Dr. Timothy Han, President at SemiQ. “With a flexible design and industry-leading power density, the QSiC Dual3 series supports 250 kW liquid chiller applications on both active front ends and compressor drives, reducing size and weight compared to traditional silicon IGBT solutions while delivering the full efficiency of SiC.”
More information about silicon carbide solutions for liquid cooling in AI data centers from SemiQ Inc
SemiQ QSiCTM Dual3 Modules flyer