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Toshiba Electronic Devices & Storage Corporation has started shipping test samples of its TW007D120E 1200V trench-gate SiC MOSFET primarily intended for power supply systems in next-generation AI data centers.
With the rapid expansion of generative AI, increasing power consumption has become a pressing issue for data centers. In particular, the widespread adoption of high-power AI servers and the growing deployment of 800V high-voltage direct current (HVDC) architectures are driving demand for power supply systems with higher power conversion efficiency and power density. Toshiba has addressed these requirements for next-generation AI data centers by developing TW007D120E, which will contribute to lower power consumption and to the miniaturization and higher efficiency of power supply systems.
TW007D120E is built around Toshiba’s proprietary trench-gate structure[1], which achieves industry-leading[2] low On-resistance per unit area (RDS(on)A); it reduces conduction loss through lower On-resistance while simultaneously achieving lower switching loss. Compared with Toshiba’s current products, TW007D120E reduces RDS(on)A by approximately 58%[3] and improves the figure of merit, On-resistance × gate-drain charge (RDS(on) × Qgd), which represents the trade-off between conduction loss and switching loss, by approximately 52%[3]. These characteristics will help to realize highly efficient operation and reduced heat generation in data center power supply systems and contribute to improved overall system efficiency.
The new product is housed in a QDPAK package that supports top-side cooling. This contributes to both higher power density implementation and enhanced thermal performance in the power stage, which are essential for power conversion in next-generation AI data centers.
Toshiba will prepare for mass production of TW007D120E during fiscal year 2026 and will continue to expand its lineup, including development for automotive applications. Through the trench-gate SiC MOSFET, the company will contribute to improved power efficiency and reduced CO₂ emissions in data centers and a wide range of industrial equipment, supporting the realization of a decarbonized society.
TW007D120E is based on results obtained from JPNP21029, a project subsidized by the New Energy and Industrial Technology Development Organization (NEDO).
More information about the SiC Power Devices from Toshiba
[1] A device structure in which fine trenches are formed in the semiconductor substrate and gate electrodes are embedded within the trenches.[2] Toshiba research, as of May 2026.[3] Comparison of the newly developed 1200V SiC MOSFET with Toshiba’s 3rd-generation SiC MOSFET (TW015Z120C). Toshiba research, as of May 2026.